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Title: Pure-Play, Next-Generation Power Semiconductors - GaN & SiC Electrify Our World™
Abstract: The key to all our success and long-term environmental health is to transition from fossil-fuel sources of electricity, and from fossil-fuel loads, to renewable, new energy sources and uses – a mission to “Electrify Our World™”. A critical, enabling technology to our goal is the family of ‘wide band-gap’ power semiconductors – silicon carbide (SiC) and gallium nitride (GaN).
GaNFast™ power ICs – with integration of GaN power, GaN drive, control, protection and sensing - are taking market share from legacy silicon chips – now – with over 60,000,000 units shipped to world-class customers such as Xiaomi, OPPO, Lenovo, and vivo, with zero reported GaN field failures.
Now, Navitas has acquired GeneSiC Semiconductor – industry innovators in silicon carbide with products from 650 V to 6.5 kV. GeneSiC silicon carbide MOSFETs use a proprietary trench-assisted planar gate technology to deliver the highest efficiency at high temperature and high-speed, with reliable, high-yield manufacturing.
Now, wide bandgap semiconductors can improve applications from 20 W mobile fast chargers, to 20 kW EV OBC, to 20 MW grid-tied systems.
As we look ahead, each GaN power IC shipped saves 4 kg of CO2, with huge reductions in CO2 footprint for all customer applications, and Navitas is the world’s first semiconductor company to be certified as CarbonNeutral™. In total, GaN and SiC are expected to save 6 Gtons of CO2 per year by 2026, as we work to “Electrify Our World”.